FDMC035N10X1
N-CHANNEL POWERTRENCH MOSFET 100Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDMC035N10X1 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.5A at 25°C (Ta). With a maximum Rds(on) of 37mOhm at 5.5A and 10V Vgs, it offers efficient power switching. The MOSFET exhibits a gate charge (Qg) of 58nC at 10V and an input capacitance (Ciss) of 2675pF at 50V Vds. It is packaged in an 8-PQFN (3.3x3.3) with a Power33 footprint, suitable for surface mounting. Maximum power dissipation is rated at 2.3W (Ta) and 50W (Tc). This component is utilized in industries such as automotive and industrial power management.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2675 pF @ 50 V |
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