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FDMC0310AS

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FDMC0310AS

MOSFET N-CH 30V 19A/21A 8MLP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDMC0310AS, a PowerTrench®, SyncFET™ N-Channel MOSFET, offers a 30V drain-to-source voltage. This component features a low on-resistance of 4.4mOhm at 19A and 10V Vgs, with continuous drain current ratings of 19A (Ta) and 21A (Tc). The 8-MLP (3.3x3.3) package facilitates efficient thermal management, supporting a maximum power dissipation of 2.4W (Ta) and 36W (Tc). Key electrical characteristics include a gate charge (Qg) of 52nC at 10V and input capacitance (Ciss) of 3165pF at 15V. The device operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power management and high-efficiency switching circuits within the automotive and industrial sectors.

Additional Information

Series: PowerTrench®, SyncFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C19A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs4.4mOhm @ 19A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3165 pF @ 15 V

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