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FDMC013P030Z

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FDMC013P030Z

MOSFET P-CHANNEL 30V 54A 8MLP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMC013P030Z is a P-Channel MOSFET designed for high-efficiency power switching. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 54A at 25°C (Tc), with a maximum power dissipation of 30W (Tc). The low on-resistance of 7mOhm is achieved at 14A and 10V Vgs. It supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±25V. Key parameters include a gate charge (Qg) of 135 nC at 10V and input capacitance (Ciss) of 5785 pF at 15V. The FDMC013P030Z is housed in an 8-MLP (3.3x3.3) package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C (TJ). This device is frequently utilized in automotive, industrial, and power management applications requiring robust power switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5785 pF @ 15 V

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