FDMB668P
MOSFET P-CH 20V 6.1A 8MLPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDMB668P is a P-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.1A at 25°C, with a maximum power dissipation of 1.9W. The Rds(On) is specified at 35mOhm maximum at 6.1A and 4.5V Vgs. It is housed in an 8-MLP, MicroFET (3x1.9) package, suitable for surface mounting, and offered in Tape & Reel (TR) packaging. Key electrical characteristics include a gate charge (Qg) of 59 nC maximum at 10V and input capacitance (Ciss) of 2085 pF maximum at 10V. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-MLP, MicroFET (3x1.9) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2085 pF @ 10 V |
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