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FDMA908PZ

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FDMA908PZ

MOSFET P-CH 12V 12A 6MICROFET

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi's FDMA908PZ is a P-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 12V drain-source voltage (Vdss) and supports a continuous drain current of 12A (Ta) at 25°C. The Rds(On) is specified at a maximum of 12.5mOhm at 12A and 4.5V Vgs, with a gate charge (Qg) of 34 nC at 4.5V. Input capacitance (Ciss) is a maximum of 3957 pF at 6V. The device is housed in a compact 6-MicroFET (2x2) package, also known as a 6-WDFN Exposed Pad, suitable for surface mounting. It operates across a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 2.4W (Ta). This component is frequently utilized in power management, battery charging, and consumer electronics sectors.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs12.5mOhm @ 12A, 4.5V
FET Feature-
Power Dissipation (Max)2.4W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3957 pF @ 6 V

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