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FDMA7670

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FDMA7670

MOSFET N-CH 30V 11A 6MICROFET

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDMA7670 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 11A at 25°C, with a maximum power dissipation of 2.4W (Ta). The low on-resistance, specified as 15mOhm at 11A and 10V, is achieved with a gate drive of 4.5V to 10V. The MOSFET exhibits a gate charge (Qg) of 22 nC at 10V and an input capacitance (Ciss) of 1360 pF at 15V. Packaged in a compact 6-MicroFET (2x2) surface mount configuration (6-WDFN Exposed Pad), this component is suitable for use in portable electronics, power management solutions, and automotive applications. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs15mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1360 pF @ 15 V

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