FDMA6676PZ
MOSFET P-CH 30V 11A 6MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi PowerTrench® FDMA6676PZ is a P-Channel MOSFET designed for efficient power management in demanding applications. This device features a 30V drain-source voltage and a continuous drain current capability of 11A at 25°C, with a maximum power dissipation of 2.4W. The low on-resistance of 13.5mOhm at 11A and 10V gate-source voltage, coupled with a 4.5V to 10V drive voltage range, ensures minimal conduction losses. The component is housed in a compact 6-MicroFET (2x2) package, facilitating high-density board layouts. Key electrical characteristics include a gate charge of 46 nC and input capacitance of 2160 pF. With an operating temperature range of -55°C to 150°C, the FDMA6676PZ is suitable for use in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 6-MicroFET (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 15 V |
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