FDMA510PZ
MOSFET P-CH 20V 7.8A 6MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDMA510PZ is a P-Channel PowerTrench® MOSFET designed for high-efficiency switching applications. This component features a drain-source breakdown voltage (Vdss) of 20 V and a continuous drain current (Id) of 7.8 A at 25°C, with a maximum power dissipation of 2.4 W (Ta). The device offers a low Rds(on) of 30 mOhm at 7.8 A and 4.5 V gate drive. It utilizes a 6-MicroFET (2x2) package with a surface mount configuration for compact integration. Key parameters include a gate charge (Qg) of 27 nC at 4.5 V and an input capacitance (Ciss) of 1480 pF at 10 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power management, battery charging, and portable electronics.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-MicroFET (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 10 V |
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