FDI3652
MOSFET N-CH 100V 9A/61A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDI3652 is an N-Channel Power MOSFET from the PowerTrench® series, specified in a TO-262 (I2PAK) through-hole package. This device offers a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 9A at ambient temperature, scaling to 61A at case temperature. The FDI3652 provides a maximum power dissipation of 150W (Tc) and features a low On-Resistance (Rds On) of 16mOhm at 61A and 10V gate drive. Key electrical characteristics include a maximum Gate Charge (Qg) of 53 nC at 10V and an input capacitance (Ciss) of 2880 pF at 25V. Its operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications within the industrial and automotive sectors requiring efficient power switching.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 61A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 25 V |
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