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FDI3632

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FDI3632

MOSFET N-CH 100V 12A/80A I2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDI3632 is a PowerTrench® series N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 100V. This component offers a continuous drain current of 12A at ambient temperature (Ta) and 80A at case temperature (Tc), with a maximum power dissipation of 310W (Tc). Featuring a low Rds On of 9mOhm at 80A and 10V, this MOSFET is suitable for applications requiring efficient power switching. The device is delivered in a TO-262 (I2PAK) through-hole package, facilitating robust PCB mounting. Key electrical parameters include a gate charge (Qg) of 110 nC (max) at 10V and input capacitance (Ciss) of 6000 pF (max) at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and industrial power applications.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)310W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 25 V

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