FDI2532
MOSFET N-CH 150V 8A/79A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDI2532 is an N-Channel Power MOSFET from the PowerTrench® series, housed in a TO-262 (I2PAK) package. This through-hole component offers a Drain-Source Voltage (Vdss) of 150V. It features a continuous drain current (Id) of 8A at ambient temperature (Ta) and 79A at case temperature (Tc), with a maximum power dissipation of 310W (Tc). The Rds On is specified at a maximum of 16mOhm at 33A and 10V. Key electrical characteristics include a maximum gate charge (Qg) of 107 nC at 10V and input capacitance (Ciss) of 5870 pF at 25V. The operating junction temperature range is -55°C to 175°C. This device is suitable for applications in power supplies, industrial motor control, and automotive systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5870 pF @ 25 V |
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