FDI030N06
MOSFET N-CH 60V 120A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDI030N06 is an N-Channel Power Trench® MOSFET designed for high-current applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 120 A at 25°C (Tc), with a maximum power dissipation of 231 W (Tc). The low on-resistance of 3.2 mOhm at 75 A and 10 V gate-source voltage (Vgs) ensures efficient power transfer. Key parameters include a gate charge (Qg) of 151 nC at 10 V and an input capacitance (Ciss) of 9815 pF at 25 V. The FDI030N06 is housed in a TO-262-3 Long Leads, I2PAK package, suitable for through-hole mounting. It operates across an industrial temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is commonly utilized in power supply circuits, motor control, and automotive applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9815 pF @ 25 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
