FDI025N06
MOSFET N-CH 60V 265A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDI025N06 is an N-Channel MOSFET featuring onsemi's PowerTrench® technology. This component offers a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 265A at 25°C (Tc). The exceptionally low on-resistance (Rds On) of 2.5mOhm is specified at 75A and 10V gate-source voltage. With a maximum power dissipation of 395W (Tc), this device is designed for high-power applications. The FDI025N06 utilizes a TO-262 (I2PAK) package with through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 226 nC at 10V and input capacitance (Ciss) of 14885 pF at 25V. It operates within an ambient temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications in sectors such as industrial power supplies and automotive systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 265A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 395W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 226 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14885 pF @ 25 V |
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