FDH5500-F085
MOSFET N-CH 55V 75A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ FDH5500-F085 is an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). Its low on-resistance is specified as 7mOhm maximum at 75A and 10V gate-source voltage. The TO-247-3 package facilitates through-hole mounting. Key electrical characteristics include a gate charge of 268 nC (max) at 20V and input capacitance of 3565 pF (max) at 25V. Qualified to AEC-Q101, this device is suitable for automotive and industrial power management systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 268 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3565 pF @ 25 V |
| Qualification | AEC-Q101 |
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