FDH50N50-F133
MOSFET N-CH 500V 48A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDH50N50-F133 is a UniFET™ series N-Channel Power MOSFET designed for high-performance switching applications. This component features a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 48 A at 25°C, with a maximum power dissipation of 625 W. The device exhibits a low on-resistance of 105 mOhm at 24 A and 10 V, complemented by a gate charge (Qg) of 137 nC at 10 V. With a gate-source voltage (Vgs) tolerance up to ±20V and a threshold voltage (Vgs(th)) of 5V at 250µA, it offers robust gate control. The input capacitance (Ciss) is rated at a maximum of 6460 pF at 25 V. Packaged in a TO-247-3 through-hole configuration, this MOSFET operates across a wide temperature range of -55°C to 150°C. Typical applications include power factor correction, switch mode power supplies, and general purpose power switching.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6460 pF @ 25 V |
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