FDH27N50
MOSFET N-CH 500V 27A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDH27N50 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component offers a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 27A at 25°C. With a low on-resistance (Rds On) of 190mOhm maximum at 13.5A and 10V Vgs, it minimizes conduction losses. The device features a high power dissipation capability of 450W (Tc) and a maximum junction temperature of 175°C, making it suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 67nC at 10V and input capacitance (Ciss) of 3550pF at 25V. The FDH27N50 is packaged in a TO-247-3 through-hole configuration. This component finds application in power supplies, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 25 V |
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