FDH15N50
MOSFET N-CH 500V 15A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDH15N50 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 15A at 25°C. With a maximum power dissipation of 300W (Tc) and a low on-resistance of 380mOhm at 7.5A and 10V, it offers efficient power handling. The device utilizes a TO-247-3 through-hole package and has a gate charge (Qg) of 41 nC at 10V and input capacitance (Ciss) of 1850 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for applications in power supply units, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V |
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