FDG329N
MOSFET N-CH 20V 1.5A SC88Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDG329N, a PowerTrench® N-Channel MOSFET, offers 20V drain-source voltage and a continuous drain current of 1.5A at 25°C (Ta). This surface mount component features a low on-resistance of 90mOhm maximum at 1.5A and 4.5V gate-source voltage. The device has a gate charge of 4.6 nC maximum at 4.5V Vgs and an input capacitance of 324 pF maximum at 10V Vds. With a maximum power dissipation of 420mW at 25°C (Ta), the FDG329N is suitable for applications requiring efficient switching in compact form factors. This device is available in a 6-TSSOP, SC-88 (SC-70-6) package, tape and reel. Operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 420mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 10 V |
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