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FDG327N

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FDG327N

MOSFET N-CH 20V 1.5A SC88

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDG327N is a PowerTrench® N-Channel MOSFET designed for efficient power switching applications. This component offers a 20 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.5 A at 25°C, with a maximum power dissipation of 420 mW (Ta). It features a low on-resistance of 90 mOhm at 1.5 A and 4.5 V, and can be driven by gate voltages as low as 1.8 V, with optimal performance at 4.5 V. The device exhibits a typical input capacitance (Ciss) of 423 pF at 10 V and a gate charge (Qg) of 6.3 nC at 4.5 V. The FDG327N is housed in a compact SC-88 (SC-70-6) surface-mount package, making it suitable for space-constrained designs in industries such as consumer electronics and industrial automation. It operates reliably within a temperature range of -55°C to 150°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs90mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)420mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds423 pF @ 10 V

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