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FDG326P

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FDG326P

MOSFET P-CH 20V 1.5A SC88

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDG326P is a P-Channel PowerTrench® MOSFET designed for high-efficiency switching applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 1.5A at 25°C, with a maximum power dissipation of 750mW. The Rds(On) is specified at 140mOhm maximum at 1.5A and 4.5V Vgs. Operating across a temperature range of -55°C to 150°C, the FDG326P utilizes a surface mount SC-88 (SC-70-6) package. Key parameters include a gate charge (Qg) of 7nC typical at 4.5V Vgs and input capacitance (Ciss) of 467pF typical at 10V Vds. Drive voltages range from 1.8V to 4.5V, with a threshold voltage (Vgs(th)) of 1.5V maximum at 250µA. This component is suitable for use in power management solutions within the consumer electronics and industrial sectors.

Additional Information

Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs140mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds467 pF @ 10 V

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