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FDG315N

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FDG315N

MOSFET N-CH 30V 2A SC88

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDG315N is an N-Channel PowerTrench® MOSFET in an SC-88 (SC-70-6) surface mount package. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C. The on-resistance (Rds On) is specified at a maximum of 120mOhm at 2A, 10V. Designed with advanced PowerTrench® technology, it offers efficient switching characteristics with a typical gate charge (Qg) of 4 nC at 5V and an input capacitance (Ciss) of 220 pF at 15V. The maximum power dissipation is 750mW at 25°C (Ta). This component is suitable for applications in consumer electronics and industrial power management. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs120mOhm @ 2A, 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 15 V

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