FDG314P
MOSFET P-CH 25V 650MA SC88Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDG314P is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous Drain current (Id) of 650 mA at 25°C. With a maximum Power Dissipation (Pd) of 750 mW (Ta), it offers a low on-resistance of 1.1 Ohm at 500 mA and 4.5 V gate drive. The device utilizes MOSFET technology and is supplied in an SC-88 (SC-70-6) package, compatible with tape and reel packaging. Its operating temperature range is from -55°C to 150°C. Typical applications include power management and switching circuits across various electronic systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 650mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 63 pF @ 10 V |
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