FDFS6N754
MOSFET N-CH 30V 4A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDFS6N754 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C. With a low on-resistance of 56mOhm maximum at 4A and 10V Vgs, it minimizes conduction losses. The device offers a gate charge (Qg) of 6 nC maximum at 10V Vgs and an input capacitance (Ciss) of 299 pF maximum at 15V Vds. The FDFS6N754 is packaged in a standard 8-SOIC (0.154", 3.90mm Width) package and supports surface mounting. Its maximum power dissipation is 1.6W. This MOSFET includes an isolated Schottky diode, enhancing its robustness in switching circuits. Operating temperature ranges from -55°C to 150°C. The FDFS6N754 is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 4A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 299 pF @ 15 V |
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