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FDFS6N548

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FDFS6N548

MOSFET N-CH 30V 7A 8SOIC

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDFS6N548 is an N-Channel PowerTrench® MOSFET designed for efficient power management applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 7A at 25°C. With a low on-resistance of 23mOhm maximum at 7A and 10V Vgs, it minimizes conduction losses. The MOSFET includes an integrated Schottky diode for enhanced performance and a maximum power dissipation of 1.6W. Key electrical characteristics include a gate charge (Qg) of 13 nC maximum at 10V, and input capacitance (Ciss) of 700 pF maximum at 15V. The 8-SOIC package facilitates surface mounting and is supplied on tape and reel. This device is suitable for use in industrial and automotive systems requiring robust power switching. Operating temperature range is -55°C to 150°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Rds On (Max) @ Id, Vgs23mOhm @ 7A, 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 15 V

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