FDFS6N303
MOSFET N-CH 30V 6A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDFS6N303 is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 6 A at 25°C, with a maximum power dissipation of 900mW. The Rds On is specified at a maximum of 35mOhm at 6A and 10V Vgs. It offers a Gate Drive Voltage range from 4.5V to 10V and a Gate Charge (Qg) of 17 nC maximum. The device incorporates a Schottky diode for enhanced performance and is housed in an 8-SOIC surface mount package. This MOSFET is suitable for use in various industrial sectors, including consumer electronics and general-purpose power management. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 15 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
