FDFS2P753AZ
MOSFET P-CH 30V 3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDFS2P753AZ is a P-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3A at 25°C, with a maximum power dissipation of 3.1W. The Rds On is specified at 115mOhm maximum at 3A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 11 nC maximum at 10V and an input capacitance (Ciss) of 455 pF maximum at 15V. This MOSFET incorporates an isolated Schottky diode for enhanced performance. It is supplied in an 8-SOIC surface mount package, facilitating efficient board layout. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management solutions across various industries.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 3A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 455 pF @ 15 V |
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