FDFS2P103A
MOSFET P-CH 30V 5.3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDFS2P103A is a P-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 5.3A at 25°C, with a maximum power dissipation of 900mW. The MOSFET exhibits a low on-resistance of 59mOhm at 5.3A and 10V Vgs, with a gate drive range optimized for 4.5V to 10V. Key characteristics include a maximum gate charge (Qg) of 8 nC at 5V and an input capacitance (Ciss) of 535 pF at 15V. The FDFS2P103A incorporates an isolated Schottky diode and is housed in an 8-SOIC surface-mount package, supplied on tape and reel. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 5.3A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 15 V |
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