FDFS2P102
MOSFET P-CH 20V 3.3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDFS2P102 is a P-Channel MOSFET designed for demanding applications. This device features a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 3.3A at 25°C (Ta). With a maximum power dissipation of 900mW (Ta) and a low on-resistance of 125mOhm at 3.3A and 10V, it offers efficient switching performance. The FDFS2P102 utilizes MOSFET technology and is housed in an 8-SOIC package, suitable for surface mounting. Key specifications include a gate charge of 10 nC at 10V and input capacitance of 270 pF at 10V. The device operates across a temperature range of -55°C to 150°C (TJ). It incorporates a Schottky diode for enhanced performance. This component is commonly found in power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 3.3A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
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