FDFMA3N109
MOSFET N-CH 30V 2.9A 6MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDFMA3N109 is a PowerTrench® N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-to-source voltage and a continuous drain current of 2.9A at 25°C (Tc). With a low Rds(on) of 123mOhm maximum at 2.9A and 4.5V Vgs, it offers minimal conduction losses. The MOSFET is housed in a compact 6-MicroFET (2x2) package, suitable for surface mount assembly. Key characteristics include a gate charge of 3 nC maximum and input capacitance of 220 pF maximum. The integrated Schottky diode provides enhanced performance and protection. This device is utilized in industries such as consumer electronics and industrial automation. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 123mOhm @ 2.9A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-MicroFET (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 15 V |
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