FDFMA2P859T
MOSFET P-CH 20V 3A MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDFMA2P859T is a P-Channel MOSFET with a 20V drain-to-source voltage (Vdss). This device features a 3A continuous drain current (Id) at 25°C and a maximum power dissipation of 1.4W. The on-resistance (Rds On) is specified at 120mOhm at 3A, 4.5V. The FDFMA2P859T utilizes onsemi's PowerTrench® technology and is housed in a 6-UDFN Exposed Pad package, specifically a MicroFET 2x2 Thin, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 6 nC at 4.5V and input capacitance (Ciss) of 435 pF at 10V. Drive voltages range from 1.8V to 4.5V. This component includes an isolated Schottky diode and operates within a temperature range of -55°C to 150°C. Applications include battery management, load switching, and power conversion.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | MicroFET 2x2 Thin |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 10 V |
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