FDFMA2P857
MOSFET P-CH 20V 3A 6MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDFMA2P857 is a P-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a 20V drain-source voltage rating and a continuous drain current capability of 3A at 25°C. The Rds(on) is specified at a maximum of 120mOhm when conducting 3A with a 4.5V gate-source voltage. Key parameters include a gate charge of 6 nC at 4.5V and an input capacitance of 435 pF at 10V. The MOSFET incorporates an isolated Schottky diode and operates within a temperature range of -55°C to 150°C. Packaged in a compact 6-MicroFET (2x2) surface mount configuration, this component is suitable for demanding applications across automotive, industrial, and consumer electronics sectors. It is supplied on tape and reel for automated assembly.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | 6-MicroFET (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 10 V |
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