FDFMA2P029Z-F106
MOSFET P-CH 20V 3.1A 6MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi PowerTrench® FDFMA2P029Z-F106 is a P-channel MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 3.1A at 25°C. The device offers a low on-resistance of 95mOhm maximum at 3.1A and 4.5V Vgs. It is housed in a compact 6-MicroFET (2x2) package with an exposed pad for enhanced thermal performance, enabling a maximum power dissipation of 1.4W. Key electrical characteristics include a gate charge of 10nC at 4.5V and an input capacitance of 720pF at 10V. The integrated Schottky diode provides improved switching performance. This MOSFET is suitable for use in industrial, consumer electronics, and automotive applications requiring efficient power switching and management. Operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 3.1A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-MicroFET (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 10 V |
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