FDFMA2P029Z
MOSFET P-CH 20V 3.1A 6MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi PowerTrench® P-Channel MOSFET, part number FDFMA2P029Z, offers a 20V drain-source voltage and a continuous drain current of 3.1A at 25°C ambient. This device features a low Rds(on) of 95mOhm at 3.1A and 4.5V Vgs, with a gate charge of 10nC. The P-Channel MOSFET is housed in a compact 6-MicroFET (2x2) surface mount package, utilizing a Tape & Reel (TR) for efficient assembly. Key characteristics include a maximum power dissipation of 1.4W at junction temperature and an isolated Schottky diode. This component is suitable for applications in consumer electronics and industrial automation where space-constrained power management is critical.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 3.1A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.4W (Tj) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-MicroFET (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 10 V |
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