FDFMA2N028Z
MOSFET N-CH 20V 3.7A 6MICROFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDFMA2N028Z is an N-Channel PowerTrench® MOSFET designed for efficient power management. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3.7A at 25°C (Ta). With a maximum Rds(on) of 68mOhm at 3.7A and 4.5V Vgs, it offers low conduction losses. The device operates with a gate drive range of 2.5V to 4.5V and includes an isolated Schottky diode. Its 6-MicroFET (2x2) package, specifically the 6-VDFN Exposed Pad, is suitable for surface mounting. Key parameters include a maximum power dissipation of 1.4W (Tj) and a gate charge (Qg) of 6 nC at 4.5V. This MOSFET is utilized in applications such as consumer electronics and industrial power control.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 3.7A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.4W (Tj) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-MicroFET (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 455 pF @ 10 V |
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