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FDD9511L-F085

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FDD9511L-F085

MOSFET P-CH 40V 25A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDD9511L-F085 is a P-Channel MOSFET from the PowerTrench® series, designed for demanding applications. This AEC-Q101 qualified component features a 40V Drain-Source Voltage (Vdss) and a continuous drain current capability of 25A (Tc) at 25°C. With a low Rds(On) of 21mOhm at 25A and 10V Vgs, it offers efficient power switching. The device is packaged in a TO-252 (DPAK) surface-mount package, providing robust thermal performance with a maximum power dissipation of 48.4W (Tj). Key parameters include a gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 1200 pF at 20V. This MOSFET is suitable for automotive and industrial power management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs21mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)48.4W (Tj)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252 (DPAK)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 20 V
QualificationAEC-Q101

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