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FDD9510L-F085

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FDD9510L-F085

MOSFET P-CH 40V 50A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD9510L-F085 is a P-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc), with a power dissipation of 75W (Tj). The low on-resistance of 13.5mOhm at 50A and 10V (Vgs) is achieved through advanced MOSFET technology. Packaged in a TO-252 (DPAK) surface mount configuration, the FDD9510L-F085 is suitable for power management, automotive, and industrial systems requiring efficient switching and power handling. Key electrical parameters include a gate charge of 37 nC (max) at 10V and input capacitance of 2020 pF (max) at 20V. The operating temperature range is -55°C to 175°C (Tj).

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs13.5mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)75W (Tj)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2020 pF @ 20 V

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