FDD9509L-F085
MOSFET P-CH 40V 90A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD9509L-F085 is a P-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This component features a drain-source breakdown voltage of 40V and a continuous drain current capability of 90A at 25°C (Tc). With a maximum power dissipation of 150W (Tj), it is well-suited for demanding thermal environments. The on-resistance (Rds On) is specified at a low 7.5mOhm at 70A and 10V gate-source voltage.
Key electrical characteristics include an input capacitance (Ciss) of 3350pF at 20V and a gate charge (Qg) of 75nC at 10V, facilitating efficient switching. The device operates over a temperature range of -55°C to 175°C (TJ) and is housed in a TO-252 (DPAK) surface-mount package, commonly utilized in automotive, industrial, and consumer electronics sectors where robust power management is critical. The maximum gate-source voltage is ±16V, and the threshold voltage (Vgs(th)) is 3V at 250µA.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tj) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3350 pF @ 20 V |
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