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FDD9410-F085

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FDD9410-F085

MOSFET N-CH 40V 50A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD9410-F085 is an N-Channel MOSFET from the PowerTrench® series, packaged in a TO-252AA (DPAK) surface-mount configuration. This component features a Drain-Source Voltage (Vdss) of 40 V and a continuous Drain Current (Id) of 50 A at 25°C (Tc), with a maximum power dissipation of 75 W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 4.1 mOhm at 50 A and 10 V, and a gate charge (Qg) of 34.5 nC at 10 V. The device operates over a temperature range of -55°C to 175°C (TJ) and is AEC-Q101 qualified, making it suitable for automotive applications. The maximum gate-source voltage (Vgs) is ±20 V, and the threshold voltage (Vgs(th)) is 4 V at 250 µA. This MOSFET is supplied in Tape & Reel packaging.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs4.1mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)75W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1715 pF @ 25 V
QualificationAEC-Q101

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