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FDD9409L-F085

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FDD9409L-F085

MOSFET N-CH 40V 90A TO252

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD9409L-F085 is a PowerTrench® series N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 40V and can handle a continuous drain current (Id) of 90A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2.6mOhm at 80A and 10V Vgs, it minimizes conduction losses. The device offers a gate charge (Qg) of 68 nC (max) at 10V and input capacitance (Ciss) of 3360 pF (max) at 20V Vds. It supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. The MOSFET is packaged in a TO-252AA (DPAK) surface mount configuration and rated for a maximum power dissipation of 150W (Tj), operating across a temperature range of -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial power supplies, and battery management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)150W (Tj)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3360 pF @ 20 V

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