FDD8N50NZTM
MOSFET N-CH 500V 6.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD8N50NZTM is a UniFET-II™ N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) rating of 6.5A at 25°C, with a maximum power dissipation of 90W (Tc). The Rds On is specified at 850mOhm maximum at 3.25A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 18nC (max) at 10V and input capacitance (Ciss) of 735pF (max) at 25V. The device utilizes Metal Oxide technology and is housed in a TO-252AA (DPAK) surface mount package, supplied on tape and reel. This MOSFET is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 735 pF @ 25 V |
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