FDD8896-G
MOSFET N-CH 30V TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD8896-G is an N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and offers a continuous drain current capability of 17A at 25°C ambient and up to 94A under specific thermal conditions (Tc). With a maximum power dissipation of 80W (Tc) and a low on-resistance (Rds On) of 5.7mOhm at 35A and 10V Vgs, it ensures efficient power handling. The FDD8896-G supports gate drive voltages from 4.5V to 10V and has a typical gate charge of 60 nC at 10V. Its TO-252AA (DPAK) surface mount package facilitates integration into compact designs. Qualified to AEC-Q101 standards, this MOSFET is suitable for automotive and other high-reliability sectors. Operating temperature ranges from -55°C to 175°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 94A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2525 pF @ 15 V |
| Qualification | AEC-Q101 |