FDD8882
MOSFET N-CH 30V 12.6/55A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD8882 is an N-Channel Power MOSFET from the PowerTrench® series. This device features a 30 V drain-source breakdown voltage (Vdss) and offers a continuous drain current capability of 12.6 A at 25°C ambient temperature (Ta) and 55 A at 25°C case temperature (Tc). With a maximum power dissipation of 55W (Tc), it is designed for efficient power handling. The on-resistance (Rds On) is specified at a maximum of 11.5 mOhm at 35 A and 10 Vgs. Key parameters include a gate charge (Qg) of 33 nC maximum at 10 Vgs and input capacitance (Ciss) of 1260 pF maximum at 15 Vds. The gate drive voltage range for optimal Rds On is between 4.5 V and 10 V, with a maximum gate-source voltage (Vgs) tolerance of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.5 V at 250 µA. This MOSFET is housed in a TO-252AA (DPAK) package, suitable for surface mounting, and operates across a temperature range of -55°C to 175°C (TJ). It finds application in various power management solutions across industries such as consumer electronics and industrial automation. The component is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 15 V |
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