The onsemi FDD8880-G is an N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current capability of 13 A at ambient temperature (Ta) and 58 A at case temperature (Tc). With a maximum power dissipation of 55 W (Tc) and a low on-resistance (Rds On) of 9 mOhm at 35 A and 10 Vgs, it offers excellent conduction losses. The FDD8880-G utilizes advanced PowerTrench® MOSFET technology for optimal performance and includes a gate charge (Qg) of 31 nC (max) at 10 V and input capacitance (Ciss) of 1260 pF (max) at 15 V. This MOSFET is supplied in a TO-252AA surface mount package, suitable for demanding thermal management in applications such as power supplies, automotive systems, and motor control. It supports drive voltages from 4.5 V to 10 V and operates across a wide temperature range from -55°C to 175°C.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 15 V |
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