FDD8876
MOSFET N-CH 30V 15A/73A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDD8876 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage (Vdss) and supports continuous drain currents of 15A (Ta) and 73A (Tc). The low on-resistance of 8.2mOhm at 35A and 10V (Vgs) minimizes conduction losses. With a maximum power dissipation of 70W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 47 nC (max) at 10V and input capacitance (Ciss) of 1700 pF (max) at 15V. The FDD8876 is housed in a TO-252AA surface-mount package and operates across a temperature range of -55°C to 175°C. This MOSFET is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 15 V |