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FDD8870-F085

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FDD8870-F085

MOSFET N-CH 30V 21A TO252AA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD8870-F085 is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 21 A at 25°C. With a low On-Resistance (Rds On) of 3.9 mOhm at 35 A and 10 V, it offers efficient power handling with a maximum power dissipation of 160 W (Tc). The device operates across a temperature range of -55°C to 175°C (TJ) and is qualified to AEC-Q101 standards, making it suitable for automotive applications. Key electrical characteristics include a maximum Gate Charge (Qg) of 118 nC at 10 V and an Input Capacitance (Ciss) of 5160 pF at 15 V. The FDD8870-F085 is supplied in a TO-252AA surface mount package, delivered on tape and reel.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Ta)
Rds On (Max) @ Id, Vgs3.9mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)160W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5160 pF @ 15 V
QualificationAEC-Q101

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