FDD8778
MOSFET N-CH 25V 35A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD8778 is a PowerTrench® series N-Channel MOSFET designed for high-efficiency power switching applications. This component offers a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C (Tc), with a maximum power dissipation of 39W (Tc). Key performance characteristics include a low on-resistance (Rds On) of 14mOhm at 35A and 10V, and a gate charge (Qg) of 18nC at 10V. It features a 4.5V to 10V drive voltage range and is packaged in a TO-252AA (DPAK) surface-mount configuration, supplied on tape and reel. Typical applications span automotive, industrial power supplies, and consumer electronics where robust power management is critical. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 845 pF @ 13 V |
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