FDD86581-F085
MOSFET N-CH 60V 25A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD86581-F085 is an N-Channel MOSFET featuring a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 25A (Tc) at 25°C. This device offers a maximum on-resistance (Rds On) of 15mOhm at 25A and 10V, with a gate charge (Qg) of 19 nC at 10V. The input capacitance (Ciss) is a maximum of 880 pF at 30V. Designed for surface mounting, it utilizes the TO-252 (DPAK) package. The operating temperature range is -55°C to 175°C (TJ), with a maximum power dissipation of 48.4W (Tj). This component is commonly found in power management applications across automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48.4W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 30 V |
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