FDD86580-F085
MOSFET N-CH 60V 50A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD86580-F085 is a PowerTrench® N-Channel MOSFET designed for high-performance applications. This device features a 60V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 50A at 25°C (Tc). With a low on-resistance (Rds On) of 19mOhm at 50A and 10V drive voltage, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 75W (Tj) and a gate charge (Qg) of 30 nC at 10V. Its TO-252AA (DPAK) surface mount package is ideal for space-constrained designs. Qualified to AEC-Q101 and featuring an automotive grade, this component is suitable for demanding automotive and industrial power management systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tj) |
| Vgs(th) (Max) @ Id | 4.2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 30 V |
| Qualification | AEC-Q101 |
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