FDD86569-F085
MOSFET N-CH 60V 90A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD86569-F085 is a N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 60V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 90A at 25°C (Tc), with a maximum power dissipation of 150W (Tj). The low on-resistance of 5.7mOhm at 80A and 10V (Vgs) is achieved through advanced MOSFET technology. Key parameters include a gate charge (Qg) of 52 nC at 10V and input capacitance (Ciss) of 2520 pF at 30V. The FDD86569-F085 is housed in a TO-252AA (DPAK) surface mount package and is AEC-Q101 qualified, making it suitable for automotive and industrial power management systems. It supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 30 V |
| Qualification | AEC-Q101 |
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