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FDD8647L

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FDD8647L

MOSFET N-CH 40V 14A/42A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDD8647L is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a 40V drain-source breakdown voltage and offers a continuous drain current of 14A at 25°C ambient and 42A at 25°C case temperature. With a low on-resistance of 9mOhm maximum at 13A and 10V Vgs, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a maximum gate charge of 28nC at 10V and a maximum input capacitance of 1640pF at 20V. The FDD8647L is housed in a TO-252AA (DPAK) surface mount package, suitable for high-density designs, and operates across a wide temperature range of -55°C to 150°C. Its robust thermal performance allows for power dissipation of 3.1W (Ta) and 43W (Tc). This component is widely utilized in power supply units, motor control, and battery management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1640 pF @ 20 V

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